MPSA92

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 22 1999 Apr 27 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES Low current (max. 500 mA) High voltage (max. 300 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: MPSA42. PINNING PIN 1 2 3 collector base emitter MPSA92 DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −300 −300 −5 −100 −200 −100 625 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current g...