IRFP9240

IRFP9240 Data Sheet July 1999 File Number 2294.3 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17522. Features 12A, 200V rDS(ON) = 0.500Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Symbol D Ordering Information PART NUMBER IRFP9240 PACKAGE TO-247 BRAND IRFP9240 G S NOTE: When ordering, use the entire part number. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) 4-71 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFP9240 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP9240 -200 -200 -12 -7.5 -48 ±20 150 1.2 790 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . ...