CFB1370

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 PNP SILICON EPITAXIAL POWER TRANSISTOR CFB1370 (9AW) TO-220FP Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter- Base Voltage IC 3.0 Collector Current ICP 6.0 Peak PC 2.0 Power Dissipation @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 60 Collector Emitter Voltage VCBO IC=50uA, IE=0 60 Collector Base Voltage VEBO IE=50uA,IC=0 5.0 Emitter Base Voltage ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=4V,IC=0 Emitter Cut off Current VCE(Sat) IC=2A,IB=0.2A Collector Emitter Saturation Voltage VBE(Sat) IC=2A, IB=0.2A Base Emitter Saturation Voltage hFE IC=0.5A, VCE=5V 60 DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.5A, 15 Transition Frequency f=5MHz Cob VCB=10V, IE=0 80 Collector Output Capacitance f=1MHz E : 100 -200 hFE CLASSIFICATION:D : 60 -120; MARKING : CFB 1370 D CFB 1370 E UNIT V V V A A W W deg C deg C MAX 10 10 1.5 1.5 320 UNIT V V V uA uA V V MHz pF F : 160 -320 CFB 1370 F Continental Device India Limited Data Sheet Page 1 of 2 TO-220FP (Fully Isolated) Plastic Package A D C B All d...