SPD50N06S2L-13

SPD50N06S2L-13 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID 55 12.7 50 P- TO252 -3-11 V mΩ A Enhancement mode Logic Level Avalanche rated dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421 Marking PN06L13 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1) TC=25°C Symbol ID Value 50 50 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 200 240 13.6 6 ±20 136 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=50 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=50A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD50N06S2L-13 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.69 max. 1.1 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID=80µA Zero gate voltage drain current V DS=5...