SPD30N08S2-22 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID 75 21.5 30
P- TO252 -3-11
...
SPD30N08S2-22 OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID 75 21.5 30
P- TO252 -3-11
V mΩ A
Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
Type SPD30N08S2-22
Package Ordering Code P- TO252 -3-11 Q67060-S7413
Marking 2N0822
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1)
TC=25°C
Symbol ID
Value 30 30
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
120 240 14 6 ±20 136 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=30 A , V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=30A, VDS=60, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPD30N08S2-22
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.7 max. 1.1 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 75 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = V DS
ID=80µA
Zero gate voltage drain current
V DS=75V, V...
