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SPD18P06P

Part Number	SPD18P06P
Manufacturer	Infineon Technologies
Description	SIPMOS Power-Transistor
Published	Jun 7, 2005
Detailed Description	Preliminary data SPD18P06P SPU18P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-...
Datasheet	SPD18P06P PDF File

Overview

Preliminary data SPD18P06P SPU18P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.
13 -18.
6 V W · · · · A Type SPD18P06P SPU18P06P Package P-TO252 P-TO251 Ordering Code Q67040-S4189 Q67040-S4192 Pin 1 G PIN 2/4 D PIN 3 S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -18.
6 -13.
2 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -74.
4 150 8 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I ...

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SPD18P06P SIPMOS Power-Transistor - Infineon Technologies

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