SPD100N03S2L-04 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID 30 4.2 100
P-TO252-5-1
V...
SPD100N03S2L-04 OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID 30 4.2 100
P-TO252-5-1
V mΩ A
Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
175°C operating temperature Avalanche rated dv/dt rated
Titel: C:\ARJ\VPT0916 Erstellt von:
1)
Drain pin 3,6
Type Package SPD100N03S2L-04 P-TO252-5-1
Ordering Code Q67042-S4128
Marking PN03L04
Gate pin 1 n.c.: pin 2 Source pin 4,5
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current2)
TC=100°C
Symbol ID
Value 100 100
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
400 325 15 6 ±20 150 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=80A, V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 3) Reverse diode d v/dt
IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPD100N03S2L-04
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
4)
Symbol min. RthJC RthJA -
Values typ. 0.7 max. 1 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RD...