Final data
SPD09P06PL SPU09P06PL
Product Summary VDS RDS(on) ID
P-TO251-3-1
Feature
SIPMOS =Power-Transistor
P-Ch...
Final data
SPD09P06PL SPU09P06PL
Product Summary VDS RDS(on) ID
P-TO251-3-1
Feature
SIPMOS =Power-
Transistor
P-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated
-60 0.25 -9.7
P-TO252
V A
Drain pin 2
Type SPD09P06PL SPU09P06PL
Package P-TO252 P-TO251-3-1
Ordering Code Q67042-S4007 Q67042-S4020
Gate pin1 Source pin 3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value -9.7 -6.8
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg
-38.8 70 4.2 6 ±20 42 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID =-9.7 A , VDD =-25V, RGS =25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS =-9.7A, VDS =-48, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2001-07-02
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
SPD09P06PL SPU09P06PL
Values min. typ. max. 3.6 100 75 50 K/W Unit
Symbol
RthJC RthJA RthJA
-
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =-250µA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on)...
