Final data
SPD04N60C2 SPU04N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultr...
Final data
SPD04N60C2 SPU04N60C2
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity
P-TO251
Product Summary VDS RDS(on) ID 600 0.95 4.5
P-TO252
V Ω A
Type SPD04N60C2 SPU04N60C2
Package P-TO252 P-TO251
Ordering Code Q67040-S4307 Q67040-S4306
Marking 04N60C2 04N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID
Value 4.5 2.8
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =3.6A, VDD =50V
ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg
9 130 0.4 4.5 6 ±20 50 -55... +150 A V/ns V W °C mJ
Avalanche energy, repetitive tAR limited by Tjmax 1)
ID =4.5A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt
IS =4.5A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C
Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature
Page 1
2002-10-07
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage
VG...