SPB80N10L

Preliminary data SPI80N10L SPP80N10L,SPB80N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 14 80 P-TO220-3-1 V A m
Type SPP80N10L SPB80N10L SPI80N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4173 Q67042-S4171 Q67042-S4172 Marking 80N10L 80N10L 80N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 80 58 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg 320 700 25 6 ±20 250 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID =80 A , VDD =25V, RGS =25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =80A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-08-14 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI80N10L SPP80N10L,SPB80N10L Symbol min. RthJC RthJA RthJA - Values typ. max. 0.6 62.5 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Sy...