SPB20N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPB20N60S5 VDS RDS(on) ID 600 0.19 20 V Ω A PG-TO263 Type SPB20N60S5 Package PG-TO263 Ordering Code Q67040-S4171 Marking 20N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse ID = 10 A, VDD = 50 V EAS Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 20 13 40 690 1 20 ±20 ±30 208 -55... +150 Unit A mJ A V W °C Rev. 2.3 Page 1 2005-07-22 SPB20N60S5 Maximum Ratings Parameter Drain S...