SIPMOS® Power-Transistor
Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temp...
SIPMOS® Power-
Transistor
Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175°C operating temperature Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPB18P06P G
-60 V 0.13 Ω -18.6 A
PG-TO263-3
Type
Package
SPB18P06PG PG-TO263-3
Tape and reel information 1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=100 °C T A=25 °C
Marking Lead free 18P06P Yes
Packing Non dry
Value
Unit
steady state
-18.7
A
-13.2
-74.8
Avalanche energy, single pulse
E AS
I D=18.7 A, R GS=25 Ω
151
mJ
Avalanche energy, periodic limited by Tjmax
E AR
Reverse diode dv /dt
dv /dt
I D=18.7 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot
T A=25 °C
Operating and storage temperature T j, T stg
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
8
-6 ±20 81.1 "-55 ... +175"
260 °C 55/175/56
kV/µs
V W °C
Rev 1.6
page 1
2012-09-07
Parameter
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient,leaded SMD verson, device on PCB:
Symbol Conditions
SPB18P06P G
min.
Values typ.
Unit max.
R thJC
-
R thJA
-
R thJA minimal footprint
-
6 cm2 cooling area1)
-
-
1.85 K/W
-
62
-
62 K/W
-
40
Electrical ...