DatasheetsPDF.com

SPB12N50C3

Infineon Technologies
Part Number SPB12N50C3
Manufacturer Infineon Technologies
Description Power Transistor
Published Jun 7, 2005
Detailed Description Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Datasheet PDF File SPB12N50C3 PDF File

SPB12N50C3
SPB12N50C3

Overview
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPB12N50C3 VDS @ Tjmax 560 V RDS(on) 0.
38 Ω ID 11.
6 A PG-TO263 - Type SPB12N50C3 Package PG-TO263 Ordering Code Q67040-S4641 Marking 12N50C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.
5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11.
6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source volta...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)