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SPB11N60C2 Dataheets PDF



Part Number SPB11N60C2
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Cool MOS Power Transistor
Datasheet SPB11N60C2 DatasheetSPB11N60C2 Datasheet (PDF)

Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.38 11 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP11N60C2 SPB11N60C2 SPA11N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4295 Q67040-S4298 Marking 11N60C2 11N60C2 11N60C2.

  SPB11N60C2   SPB11N60C2


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Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.38 11 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP11N60C2 SPB11N60C2 SPA11N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4295 Q67040-S4298 Marking 11N60C2 11N60C2 11N60C2 P-TO220-3-31 Q67040-S4332 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 11 7 111) 71) 22 340 0.6 11 6 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR 22 340 0.6 11 6 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax 2) ID =11A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS = 11 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 125 33 Operating and storage temperature Page 1 Tj , Tstg -55...+150 °C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP11N60C2, SPB11N60C2 SPA11N60C2 Symbol min. Values typ. max. Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s RthJC RthJC_FP RthJA RthJA_FP RthJA - 35 - 1 3.8 62 80 62 1 0.26 260 K/W W/K °C Tsold - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS = VDS ID =0.5mA Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C µA 0.34 0.86 25 250 100 0.38 nA Ω Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=7A, Tj=25°C Gate input resistance f = 1 MHz, open drain Page 2 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Electrical Characteristics Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =11A, VGS =0 to 10V VDD =350V, ID =11A Symbol Conditions min. Values typ. 6 1460 610 21 45 85 13 40 48 9 10.5 24 41.5 8 Unit max. 72 13.5 54 V nC gfs Ciss Coss Crss VDS ≥2*ID *RDS(on)max, ID =7A VGS =0V, VDS =25V, f=1MHz 3 - S pF Effective output capacitance, 4) Co(er) VGS =0V, VDS =0V to 480V td(on) tr td(off) tf VDD =380V, VGS =0/13V, ID =11A, RG=6.8Ω, Tj=125°C - ns V(plateau) VDD =350V, ID =11A 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P AV =EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS . 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Electrical Characteristics Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt Tj=25°C VGS =0V, IF=IS VR =350V, IF =IS , diF /dt=100A/µs Symbol Conditions min. Values typ. 1 650 7.9 30 600 max. 11 22 1.2 1105 - Unit IS ISM TC=25°C - A V ns µC A A/µs Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.034 0.042 0.116 0.149 0.059 Value SPA 0.015 0.03 0.043 0.119 0.35 2.499 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Unit Symbol Value SPP_B 0.0002121 0.0007091 0.001184 0.001527 0.011 0.089 SPA 0.00012 0.000455 0.000638 0.00144 0.00737 0.412 Unit Ws/K Tj P tot (t) R th1 E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 1 Power dissipation Ptot = f (TC ) SPP11N60C2 2 Power dissiaption FullPAK Ptot = f (TC ) 35 140 W W 120 110 100 25 Ptot 90 8.


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