SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on)...
SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03
OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 3 100
P- TO220 -3-1
V mΩ A
Enhancement mode Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
P- TO262 -3-1
175°C operating temperature Avalanche rated dv/dt rated
Type SPP100N03S2-03 SPB100N03S2-03 SPI100N03S2-03
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67042-S4058 Q67042-S4057 Q67042-S4116
Marking PN0303 PN0303 PN0303
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1)
TC=25°C
Value 100 100 400 810 30 6 ±20 300 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80A, V DD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
kV/µs V W °C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °...