SPA20N65C3

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO220-3-31 650 0.19 20.7 V Ω A P-TO220-3-1 Type Package Ordering Code SPP20N65C3 SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter P-TO220-3-1 P-TO262-3-1 Q67040-S4556 Q67040-S4560 Marking 20N65C3 20N65C3 20N65C3 P-TO220-3-31 Q67040-S4555 Symbol ID Value SPP_I SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 20.7 13.1 20.71) 13.11) 62.1 690 1 7 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=3.5A, VDD=50V ID puls EAS EAR IAR VGS VGS Ptot 62.1 690 1 7 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 208 34.5 Operating and storage temperature T j , Tstg -55...+150 °C Page 1 2003-08-15 SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 20.7 A, T j = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Therma...