DatasheetsPDF.com

SPA17N80C3 Dataheets PDF



Part Number SPA17N80C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Cool MOS Power Transistor
Datasheet SPA17N80C3 DatasheetSPA17N80C3 Datasheet (PDF)

SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge VDS RDS(on) ID 800 0.29 17 V Ω A PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 23 1 • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP17N80C3 SPA17N80C3 Package Ordering Code PG-TO220 Q67040-S4353 PG-TO.

  SPA17N80C3   SPA17N80C3


Document
SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge VDS RDS(on) ID 800 0.29 17 V Ω A PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 23 1 • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP17N80C3 SPA17N80C3 Package Ordering Code PG-TO220 Q67040-S4353 PG-TO220-3-31 SP000216353 Marking 17N80C3 17N80C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=3.4A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=17A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature ID ID puls EAS EAR IAR.


SPA16N50C3 SPA17N80C3 SPA20N60C2


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)