CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak curren...
CoolMOSTM Power
Transistor
Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward )
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
SPA11N80C3
800 V 0.45 Ω 64 nC
Type SPA11N80C3
Package PG-TO220-3
Marking 11N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2)
ID
Pulsed drain current3)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4) AR
Avalanche
current,
repetitive
t
3),4) AR
MOSFET dv /dt ruggedness
E AS E AR I AR dv /dt
Gate source voltage
V GS
T C=25 °C T ...