SPA11N65C3

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance SPP11N65C3,SPA11N65C3 SPI11N65C3 PG-TO262 V DS RDS(on) ID 650 V 0.38 Ω 11 A PG-TO220FP PG-TO220 Type SPP11N65C3 SPA11N65C3 SPI11N65C3 Package PG-TO220 PG-TO220FP PG-TO262 Ordering Code Q67040-S4557 SP000216318 Q67040-S4561 Marking 11N65C3 11N65C3 11N65C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.5A, VDD=50V Avalanche energy, repetitive tAR limited by T 2) jmax ID=4A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg Value SPP_I SPA 11 111) 7 71) 33 33 340 340 Unit A A mJ 0.6 0.6 4 4 A ±20 ±20 V ±30 ±30 125 33 W -55...+150 °C Rev. 2.91 Page 1 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 c...