SPA08N80C3

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPA08N80C3 800 V 0.65 Ω 45 nC Type SPA08N80C3 Package PG-TO220FP Marking 08N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current2) ID T C=25 °C Pulsed drain current3) I D,pulse T C=100 °C T C=25 °C Avalanche energy, single pulse Avalanche energy, repetitive t 3),4) AR Avalanche current, repetitive t 3),4) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt I D=1.6 A, V DD=50 V I D=8 A, V DD=50 V V DS=0…640 V Gate source voltage V GS static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Mounting torque M2.5 screws Rev. 3.2 Page 1 Value 8 5.1 24 340 0.2 8 50 ±20 ±30 40 -55 ... 150 50 Unit A mJ A V/ns V W °C Ncm 2018-02-12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt S...