SP8M9

SP8M9 Transistors Switching SP8M9 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 (8) 5.0±0.2 (5) 6.0±0.3 3.9±0.15 1.5±0.1 0.15 zApplication Power switching, DC / DC converter. 1.27 0.4±0.1 0.1 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. zEquivalent circuit Limits Nchannel Pchannel 30 −30 20 −20 ±9.0 ±5.0 ±36 ±20 1.6 −1.6 36 −20 2 150 −55 to +150 Unit V V A A A A W °C °C (8) (7) (6) (5) (8) (7) (6) (5) Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Continuous Pulsed Continuous Pulsed ∗1 ∗1 ∗2 ∗2 Max.1.75 ∗2 0.5±0.1 (1) (4) 0.2±0.1 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zThermal resistance (Ta=25°C) Parameter Channel to ambient ∗MOUNTED ON A CERAMIC BOARD. Symbol Rth (ch-a) Limits 62.5 Unit °C / W ∗ 1/5 SP8M9 Transi...