®
SD57060-01
RF POWER TRANSISTORS The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
s s s ...
®
SD57060-01
RF POWER
TRANSISTORS The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
s s s s
EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 60 W with 11.5 dB gain @ 945 MHz BeO FREE PACKAGE M250 epoxy sealed ORDER CODE BRANDING SD57060-01 TSD57060-01
DESCRIPTION The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity.
PIN CONNECTION
1. Drain 2. Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol V (BR)DSS V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc= 70o C) Max. O perating Junction Temperature Storage T emperature Value 65 ± 20 7 118 200 -65 to 150
3.Source
Uni t V V A W
o o
C C
THERMAL DATA (Tcase = 70 oC)
R th (j-c) R th(c -s)* Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance 1.1 0.5
o o
C/W C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
January 2000
1/8
SD57060-01
ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC
Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = ...
