Silicon Switching Diode 500 mW 75 Volt
MCC
Features
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omponents 21201 Itasca Street Chatsworth !"# $
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Description
MCC
Features
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omponents 21201 Itasca Street Chatsworth !"# $
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DL4454
Silicon Switching Diode 500 mW 75 Volt
Fast Switching Speed Low Current Leakage Low Cost Compression Bond Construction Surface Mount Application
Maximum Ratings
l Operation & Storage Temperature: -55oC to +150oC l Maximum Thermal Resistance: 400K/W Junction to Ambient Electrical Characteristics @ 25oC Unless Otherwise Specified
Reverse Volt. Peak Reverse Volt. Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Instantaneous Forward Volt. Maximum DC Reverse Current At Rated DC Blocking Volt. Typical Junction Capacitance VR V RM IO P TOT TJ I FSM VF IR 50V 75V Resistive Load 150mA f>50Hz 500mW 175 o C 500mA 8.3ms, half sine I FM=10mA; 1.0V T J=25 o C 0.1uA V R=50V T J=25 o C Measured at 1.0MHz, V R=4.0V I F=10mA V R=6V I R=1mA RL =100OHMS
A B C
A B
MINIMELF
Cathode Mark
C
DIMENSION DIM INCHES MIN .134 .008 .055 MAX .142 .016 .059 MIN 3.40 0.20 1.40 MM MAX 3.60 0.40 1.50 NOTE
CJ
2pF
SUGGESTED SOLDER PAD LAYOUT
0.105
Reverse Recovery Time
T rr
4nS
Pulse test: Pulse width 300 usec, Duty cycle 2%.
0.075”
0.030”
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DL4454
Figure 1 Typical Forward Characteristics 200 100 60 40 20 MilliAmps 10 6 4 2 1 .6 .4 .2 .1 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.0 1.2 1.4 0 25°C 100 400 600
MCC
Figure 2 Forward De...
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