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DK2710FAK Dataheets PDF



Part Number DK2710FAK
Manufacturers Dynex
Logo Dynex
Description Fast Switching Thyristor
Datasheet DK2710FAK DatasheetDK2710FAK Datasheet (PDF)

DK27..FA DK27..FA Fast Switching Thyristor Replaces January 2000 version, DS4269-3.0 DS4269-4.0 July 2001 FEATURES s Low Switching Losses At High Frequency s Fully Characterised For Operation Up To 20kHz KEY PARAMETERS VDRM IT(RMS) ITSM dVdt dI/dt tq 1200V 290A 5000A 200V/µs 500A/µs 20µs APPLICATIONS s High Power Inverters And Choppers s UPS s AC Motor Drives s Induction Heating s Cycloconverters VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V 1200 1000 Conditions DK27 12F.

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DK27..FA DK27..FA Fast Switching Thyristor Replaces January 2000 version, DS4269-3.0 DS4269-4.0 July 2001 FEATURES s Low Switching Losses At High Frequency s Fully Characterised For Operation Up To 20kHz KEY PARAMETERS VDRM IT(RMS) ITSM dVdt dI/dt tq 1200V 290A 5000A 200V/µs 500A/µs 20µs APPLICATIONS s High Power Inverters And Choppers s UPS s AC Motor Drives s Induction Heating s Cycloconverters VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V 1200 1000 Conditions DK27 12FA K or M DK27 10FA K or M VRSM = VRRM + 100V IDRM = IRRM = 25mA at VRRM or VDRM & Tvj Outline type code: TO93 See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, then:Add K to type number for 3/4" 16 UNF thread, e.g. DK27 12FAK or Add M to type number for M16 thread, e.g. DK27 12FAM. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/13 www.dynexsemi.com DK27..FA CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half wave resistive load, Tcase = 80oC Tcase = 80oC Max. 185 290 Units A A SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions tp ≥ 10ms half sine; Tcase = 125oC VR = 0% VRRM - 1/4 sine Max. 5.0 125.0 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink dc Mounting torque 35.0Nm with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Mounting torque -40 30.0 125 150 35.0 o Conditions Min. - Max. 0.13 0.06 125 Units o C/W C/W o o C C C o Nm MEASUREMENT OF RECOVERED CHARGE - QRA1 Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR 0.5x IRR 2/13 www.dynexsemi.com DK27..FA DYNAMIC CHARACTERISTICS Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 600A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω dI/dt Rate of rise of on-state current tr < 0.5µs, Tj = 125˚C At Tvj = 125oC At Tvj = 125oC Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 125˚C, IT = 200A, VR = 50V, tq code: A dV/dt = 200V/µs (Linear to 60% VDRM), dIR/dt = 30A/µs, Gate open circuit Repetitive 50Hz Non-repetitive Min. 1.5* 3* Max. 1.85 25 200 500 800 1.2 1.0 70 20 Units V mA V/µs A/µs A/µs V mΩ µs µs mA µs VT(TO) rT tgd t(ON)TOT IH tq Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current Turn-off time *Typical value. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 12V, Tcase = 25oC, RL = 6Ω VDRM = 12V, Tcase = 25oC, RL = 6Ω At VDRM Tcase = 125oC, RL = 1kΩ Typ. Max. 3.0 200 0.2 5.0 4 16 3.0 Units V mA V V A W W 3/13 www.dynexsemi.com DK27..FA CURVES Fig.2 Maximum (limit) on-state characteristics Fig.3 Gate characteristics Fig.4 Typical recovered charge (for a device rated VDRM = 800V, tq = 20µs) 4/13 www.dynexsemi.com DK27..FA Fig.5 Transient thermal impedance - junction to case Fig.6 Non-repetitive sub-cycle surge on-state current and I2t rating 5/13 www.dynexsemi.com DK27..FA NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.7 Energy per pulse for sinusoidal pulses NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.8 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C 6/13 www.dynexsemi.com DK27..FA NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.9 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.10 Energy per pulse for trapezoidal pulses 7/13 www.dynexsemi.com DK27..FA NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.11 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.12 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C 8/13 www.dynexsemi.com DK27..FA NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.13 Energy per pulse for trapezoidal pulses NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω Fig.14 Maximum all.


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