Gallium Arsenide Schottky Rectifier
Second generation
DGS 17-03CS DGSK 36-03CS
VRRM = 300 V IDC = 29 A CJunction = 10.7...
Gallium Arsenide
Schottky Rectifier
Second generation
DGS 17-03CS DGSK 36-03CS
VRRM = 300 V IDC = 29 A CJunction = 10.7 pF
Type DGS 17-03CS
Marking on product 17A300AS
Circuit
A
C
Single
DGSK 36-03CS
DGSK 36-03CS
Common cathode
A
C
A
Package
TO-252 AA A
A
TAB
TO-263 AB A
A
TAB
A = Anode, TAB = Cathode
Diode
Symbol VRRM/RSM IFAV IFAV IFSM Ptot
Conditions
TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine TC = 25°C
Maximum Ratings
300
V
29
A
17.5
A
80
A
34
W
Symbol
Conditions
Characteristic Values min. typ. max.
VF
IF = 7.5 A; TVJ = 25°C
IF = 7.5 A; TVJ = 125°C
IR
VR = VRRM; TVJ = 25°C
VR = VRRM; TVJ = 125°C
1.5 1.9 V
1.1
V
0.25 mA
0.25
mA
IRM
IF = 5 A;
-diF/dt = 150 A/µs;
trr
VR = 150 V; TVJ = 125°C
CJ
VR = 150 V; TVJ = 125°C
RthJC Data according to IEC 60747 and per diode unless otherwise specified
1.4 23
10.7
A ns
pF 4.4 K/W
Component
Symbol
Conditions
TVJ Tstg
Maximum Ratings
-55...+175
°C
-55...+150
°C
Features
GaAs
Schottky Diode with Enhanced Barrier Height: lowest operating forward voltage drop due
to additional injection of minority carriers high switching speed
- low junction capacity of GaAs diode independent from temperature
- short and low reverse recovery current peak due to short lifetime of minority carriers
- soft turn off Surface Mount Packages: Incorporating Single and Dual Diode
Topologies Industry Standard Package Outlines Epoxy meets UL 94V-0
Applications
Switched ...
