DG611

DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications. Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611, DG612, DG613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup. The DG611 and DG612 differ only in that they respond to opposite logic levels. The versatile DG613 has two normally open and two normally closed switches. It can be given various configurations, including four SPST, two SPDT, one DPDT. For additional information see Applications Note AN207. FEATURES Fast switching - tON: 12 ns Low charge injection: ± 2 pC Wide bandwidth: 500 MHz 5 V CMOS logic compatible Low RDS(on): 18  Low quiescent power : 1.2 nW Single supply operation BENEFITS Improved data throughput Minimal switching transients Improved system performance Easily interfaced Low insertion loss Minimal power consumption APPLICATIONS Fast sample-and-holds Synchronous demodulators Pixel-rate video switching Disk/tape drives ...