BC177A

DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04 Philips Semiconductors Product specification PNP general purpose transistor FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. 3 BC177 PINNING PIN 1 2 3 emitter base collector, connected to the case DESCRIPTION 1 handbook, halfpage 2 3 2 MAM263 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V; f = 100 MHz open emitter open base CONDITIONS − − − − 125 100 MIN. MAX. −50 −45 −200 300 500 − MHz V V mA mW UNIT 1997 Jun 04 2 Philips Semiconductors Product specification PNP general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 ...