BC160-16

DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC160; BC161 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification PNP medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 60 V). APPLICATIONS General purpose applications. DESCRIPTION PNP medium power transistor in a TO-39 metal package. NPN complements: BC140 and BC141. 3 1 handbook, halfpage 2 BC160; BC161 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 1 MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC160 BC161 VCES collector-emitter voltage BC160 BC161 ICM Ptot hFE peak collector current total power dissipation DC current gain BC160-10; BC161-10 BC160-16; BC161-16 fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz Tcase ≤ 45 °C IC = −100 mA; VCE = −1 V 63 100 50 100 160 − 160 250 − MHz open base − − − − − − − − −40 −60 −1.5 3.7 V V A W open emitter − − − − −40 −60 V V CONDITIONS MIN. TYP. MAX. UNIT 1997 May 12 2 Philips Semiconductors Product specification PNP medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC160 BC161 VCEO collector-emitter voltage BC160 BC161 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total...