Document
Silicon Tuning Diode • High Q hyperabrupt tuning diode • Very low capacitance spread • Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• For low frequency control elements such as TCXOS and VCXOS
• High capacitance ratio and good C-V linearity • Pb-free (RoHS compliant) package
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BBY65-02V
Type BBY65-02V
Package SC79
Configuration single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Forward current Operating temperature range Storage temperature
VR IF Top Tstg
LS(nH) Marking 0.6 F
Value 15 50
-55 ... 150 -55 ... 150
Unit V mA °C
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 10 V VR = 10 V, TA = 85 °C
IR - - 10
- - 100
AC Characteristics
Diode capacitance
VR = 0.3 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.7 V, f = 1 MHz
CT 28.2 29.5 30.8 - 20.25 - 9.8 - 4.45 2.6 2.7 2.8
Capacitance ratio VR = 0.3 V, VR = 4.7 V Capacitance ratio VR = 1 V, VR = 3 V Series resistance VR = 1 V, f = 470 MHz
CT0.3/ CT4.7 CT1/CT3
rS
10 10.9 - 4.55 - 0.6 0.9
Unit nA
pF
pF pF Ω
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CT
Diode capacitance CT = ƒ (VR) f = 1MHz
40
pf
30 25 20 15 10
5
00 1 2 3 V 5 VR
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Package SC79
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Date Code marking for discrete packages with one digit (SCD80, SC79, SC751)) CES-Code
Month 2 0 03 2 0 04 2 0 0 5 2 0 0 6 2 0 07 2 0 0 8 2009 2 0 1 0 2 0 1 1 2 0 1 2 2 0 13 2 0 1 4
01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5
1) New Marking Layout for SC75, implemented at October 2005.
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Edition 2009-11-16
Published by Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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