Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
BBY 56-02W
Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series in...
Description
BBY 56-02W
Silicon Tuning Diode Preliminary data Excellent linearity High Q hyperabrupt tuning diode Low series inductance Designed for low tuning voltage operation for VCO’s in mobile communications equipment Very low capacitance spread
2
1
VES05991
Type BBY 56-02W
Marking 6
Ordering Code Q62702-
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Au 1998-11-01 -14-1998
BBY 56-02W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 1 100
Unit
IR IR
-
nA µA
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
AC characteristics Diode capacitance
CT
59 39 22 19.4 15.9 2.45 0.3 0.09 0.6 67 43 27.2 23.7 19 -
pF
VR = 0.32 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 2.38 V, f = 1 MHz VR = 3 , f = 1 MHz
Capacitance ratio
CT1/C T3 rs CC Ls
-
Ω pF nH
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
VR = 1 V, f = 330 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Au 1998-11-01 -14-1998
...
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