Silicon Variable Capacitance Diode (For FM radio tuner with extended frequency band High tuning ratio low supply voltage car radio)
BB 914 Silicon Variable Capacitance Diode
• For FM radio tuner with extended frequency band • High tuning ratio low supp...
Description
BB 914 Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band High tuning ratio low supply voltage (car radio) Monolitic chip (common cathode) for perfect dual diode tracking Good linearity of C-V curve High figure of merit
Type BB 914
Marking Ordering Code SMs Q62702-B673
Pin Configuration 1 = A1 2 = A2 3=C1/2
Package SOT-23
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current, TA ≤ 60°C Operating temperature range Storage temperature Thermal Resistance Junction - ambient Symbol Values 18 20 50 - 55 ... + 125 - 55 ... + 150 ≤ 600 mA °C Unit V
VR VRM IF Top Tstg RthJA
K/W
Semiconductor Group
1
Oct-10-1996
BB 914
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
20 200
nA
VR = 16 V, TA = 25 °C VR = 16 V, TA = 60 °C
AC characteristics Diode capacitance
CT
42.5 17.6 43.75 18.7 2.34 0.28 45 19.75
pF
VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz
Capacitance ratio
CT2/CT8
2.28 ∆CT/CT 1.5 2.42 2)
% Ω -
VR = 2 V, VR = 8 V, f = 1 MHz
Capacitance matching Series resistance
VR = 2 V, VR = 8 V, f = 1 MHz rs CT = 38 pF, f = 100 MHz
Semiconductor Group
2
Oct-10-1996
BB 914
Diode capacitance per diode
CT = f(VR) f = 1MHz
100 pF
Capacitance ratio CTref/CT = f(VR)
Vref = Parameter, f = 1MHz
5.0 -
CT
80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V 10
CTref/CT4.0
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 ...
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