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BB914

Siemens Group

Silicon Variable Capacitance Diode (For FM radio tuner with extended frequency band High tuning ratio low supply voltage car radio)

BB 914 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio low supp...


Siemens Group

BB914

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BB 914 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band High tuning ratio low supply voltage (car radio) Monolitic chip (common cathode) for perfect dual diode tracking Good linearity of C-V curve High figure of merit Type BB 914 Marking Ordering Code SMs Q62702-B673 Pin Configuration 1 = A1 2 = A2 3=C1/2 Package SOT-23 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current, TA ≤ 60°C Operating temperature range Storage temperature Thermal Resistance Junction - ambient Symbol Values 18 20 50 - 55 ... + 125 - 55 ... + 150 ≤ 600 mA °C Unit V VR VRM IF Top Tstg RthJA K/W Semiconductor Group 1 Oct-10-1996 BB 914 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 20 200 nA VR = 16 V, TA = 25 °C VR = 16 V, TA = 60 °C AC characteristics Diode capacitance CT 42.5 17.6 43.75 18.7 2.34 0.28 45 19.75 pF VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz Capacitance ratio CT2/CT8 2.28 ∆CT/CT 1.5 2.42 2) % Ω - VR = 2 V, VR = 8 V, f = 1 MHz Capacitance matching Series resistance VR = 2 V, VR = 8 V, f = 1 MHz rs CT = 38 pF, f = 100 MHz Semiconductor Group 2 Oct-10-1996 BB 914 Diode capacitance per diode CT = f(VR) f = 1MHz 100 pF Capacitance ratio CTref/CT = f(VR) Vref = Parameter, f = 1MHz 5.0 - CT 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V 10 CTref/CT4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 ...




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