BB910

DISCRETE SEMICONDUCTORS DATA SHEET M3D051 BB910 VHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode FEATURES Excellent linearity Matched to 2.5% Hermetically sealed leaded glass SOD68 (DO-34) package C28: 2.5; ratio: 16 Low series resistance. APPLICATIONS Electronic tuning in VHF television tuners, band B up to 460 MHz VCO. DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. ELECTRICAL CHARACTERISTICS Tj= 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 28 V; see Fig.3 VR = 28 V; Tj = 85 °C; see Fig.3 f = 100 MHz; note 1 VR = 0.5 V; f = 1 MHz; see Figs 2 and 4 VR = 28 V; f = 1 MHz; see Figs 2 and 4 C d ( 0.5V ) --------------------C d ( 28V ) ∆C d --------Cd Note 1. VR is the value at which Cd = 40 pF. f = 1 MHz MIN. − − − 38 2.3 14 TYP. − − − − − − Cathode side indicated by a red band on a black body. Additional green band. handbook, halfpage k BB910 a MAM234 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage...