Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance)
Silicon Variable Capacitance Diode
BB 641
q q q
For VHF Hyperband TV/TR tuners High capacitance ratio Low series resi...
Description
Silicon Variable Capacitance Diode
BB 641
q q q
For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance
1
2
Type
Ordering Code (tape and reel) Q62702-B792
Pin Configuration Marking 1 2 C A red G
Package
BB 641
SOD-323
Maximum Ratings Parameter Reverse voltage Reverse voltage (R ≥ 5 kΩ) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction-ambient Symbol Values 30 35 20 – 55 … + 150 – 55 … + 150 Unit V V mA °C °C
VR VRM IF Top Tstg
Rth JA
≤ 450
K/W
Semiconductor Group
1
05 95
BB 641
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1 V … 28 V, f = 1 MHz Series resistance CT = 30 pF, f = 100 MHz Series inductance Value typ. max. Unit
IR
– – – – 69 2.88 24 – 1.55 1.8 20 200
nA
CT
62 2.65 76 3.1
pF
CT1/CT28
22 ∆CT/CT – 2.5 –
– % Ω – – – nH –
rS Ls
Package Outline SOD-323
Dimensions in mm
Semiconductor Group 2
BB 641
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
3
...
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