Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Description
BB601M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-702C (Z) 4th. Edition Nov. 1998 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. High gain; PG = 21.5 dB typ. at f = 900 MHz Low noise; NF = 1.85 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF,...
