BB302M

BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd. Edition September 1997 Features Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note 1 Marking is “BW–”. Note 2 BB302M is individual type number of HITACHI BBFET. BB302M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature ±10 25 150 150 –55 to +150 V mA mW °C °C Unit V V Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance I D(op) |yfs| — — 0.4 0.4 9 15 — — — — 13 20 +100 ±100 1.0 1.0 18 — nA nA V V mA mS Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 12 +10 ±10 Typ — — — Max — — — Unit V V V Test Conditions I D = 200µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = ±10µA VG1S = VDS = 0 VG1S = +9V VG2S = VDS = ...