Document
BB302C
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
ADE-208-573 A (Z) 2nd. Edition September 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
• Note 1 Marking is “BW–”. • Note 2 BB302C is individual type number of HITACHI BBFET.
BB302C
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature ±10 25 100 150 –55 to +150 V mA mW °C °C Unit V V
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current I D(op) — — +100 ±100 1.0 nA V(BR)G2SS ±10 — — V V(BR)G1SS +10 — — V Symbol V(BR)DSS Min 12 Typ — Max — Unit V Test Conditions I D = 200µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = ±10µA VG1S = VDS = 0 VG1S = +9V VG2S = VDS = 0 — — nA VG2S = ±9V VG1S = VDS = 0 0.4 — V VDS = 9V, VG2S = 6V I D = 100µA 0.4 — 1.0 V VDS = 9V, VG1S = 9V I D = 100µA 9 13 18 mA VDS = 9V, VG1 = 9V VG2S = 6V RG = 120kΩ Forward transfer admittance |yfs| 15 20 — mS VDS = 9V, VG1 = 9V VG2S =6V RG = 120kΩ, f = 1kHz Input capacitance Output capacitance c iss c oss 2.2 0.8 — 22 3.0 1.1 0.017 26 4.0 1.5 0.04 — pF pF pF dB VDS = 9V, VG1 = 9V VG2S =6V, RG = 120kΩ f = 1MHz VDS = 9V, VG1 = 9V VG2S =6V Noise figure NF — 1.7 2.2 dB RG = 120kΩ f = 200MHz
Reverse transfer capacitance c rss Power gain PG
BB302C
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1
Drain A ID
Source
Application Circuit VAGC = 6 to 0.3 V BBFET V DS = 9 V RFC Output
Input
RG V GG = 9 V
BB302C
Maximum Channel Power Dissipation Curve Pch (mW) 200 I D (mA) 25
Typical Output Characteristics V G2S = 6 V V G1 = VDS
150
20
Channel Power Dissipation
15
100
Drain Current
10
50
5
RG
0
50
100
150 Ta (°C)
200
0
Ambient Temperature
2 4 6 Drain to Source Voltage
Drain Current vs. Gate2 to Source Voltage 25
kΩ
68 k Ω
Drain Current vs. Gate1 Voltage 20 I D (mA) V DS = 9 V R G = 100 k Ω 16 6V 5V 4V 3V 2V 8
I D (mA)
56
20
82 k Ω
100 k Ω
15
Drain Current
10
150 k Ω 180 k Ω 200 k Ω
R G = 220 k Ω
5
Drain Current
120 k Ω
12
4
V DS = V G1 = 9 V 0 1.2 2.4 3.8 Gate2 to Source Voltage 4.8 6.0 VG2S (V) 0 2 4 6 8 V G1 (V) 10 Gate1 Voltage
56 k 68 Ω k 82 Ω k Ω
kΩ 0 0 1 kΩ 0 2 1 kΩ 0 15 k Ω 8 1 0kΩ 220 0 kΩ = 27
8 10 V DS (V)
V G2S = 1 V
BB302C
Drain Current vs. Gate1 Voltege 20 I D (mA) I D (mA) V DS = 9 V R G = 120 k Ω 6V 5V 4V 20 V DS = 9 V R G = 150 k Ω 16 6V 5V 4V 3V 2V V G2S = 1 V Drain Current vs. Gate1 Voltege
16
12
12
Drain Current
8 2V 4
3V
Drain Current
8
V G2S = 1 V
4
0
2 4 6 8 Gate1 Voltage V G1 (V)
10
0
2 4 6 8 Gate1 Voltage V G1 (V)
10
Forward Transfer Admittance |y fs | (mS)
25
Forward Transfer Admittance |y fs | (mS)
Forward Transfer Admittance vs. Gate1 Voltage V DS = 9 V R G = 100 k Ω 20 f = 1 kHz 6V 5V 4V 3V
Forward Transfer Admittance vs. Gate1 Voltage 25 V DS = 9 V R G = 120 k Ω 20 f = 1 kHz 15 6V 5V
4V 3V
15
10 2V V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10
10
2V
5
5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10
BB302C
Forward Transfer Admittance vs. Gate1 Voltage 25 V DS = 9 V R G = 150 k Ω f = 1 kHz Power Gain vs. Gate Resistance 30 25 Power Gain PG (dB) 20 15 10 5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 0 10 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 200 MHz 20 50 100 200 500 1000 Gate Resistance R G (k Ω )
Forward Transfer Admittance |y fs | (mS)
20
6V 5V 4V 3V
15
2V
10
5
Noise Figure vs. Gate Resistance 4 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 200 MHz 30 25 Power Gain PG (dB) 20 15 10 5 0 10
Power Gain vs. Drain Current
Noise Figure NF (dB)
3
2
1
V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 200 MHz 5 10 15 20 25 30
20
50
100 200
500 1000
0
Gate Resistance R G (k Ω )
Drain Current I D (mA)
BB302C
Noise Figure vs. Drain Current 4 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 200 MHz 30 25 20 15 10 5 0 10 V DS = 9 V V G1 = 9 V V G2S = 6 V 20 50 100 200 500 1000 Drain Current vs. Gate Resistance
3
2
1
0
5
10
15
20
25
30
Drain Current I D (mA)
Noise Figure NF (dB)
Drain Current I D (mA)
Gate Resistance R G (k Ω )
Gain Reduction vs. Gate2 to Source Voltage 60 Gain Reduction GR (dB) 50 40 30 20 10 Input Capacitance Ciss (pF) V DS = 9 V V G1 = 9 V V G2S = 6 V R G = 120 k Ω f = 200 MHz 6 5 4 3 2 1 0 1 2 3 4 5 6.