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BB143

Philipss

Low-voltage variable capacitance diode

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB143 Low-voltage variable capacitance diode Preliminary specification 1999 ...


Philipss

BB143

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DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB143 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES Excellent linearity Ultra small plastic SMD package C4: 2.25 pF; ratio: 2.35 Low series resistance. APPLICATIONS Voltage controlled oscillators (VCO). DESCRIPTION The BB143 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. handbook, halfpage BB143 PINNING PIN 1 2 cathode anode DESCRIPTION 1 2 L MBL026 Marking code: L. Orientation of marking code as shown. Cathode side indicated by a bar. Fig.1 Simplified outline (SOD523; SC-79) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR VRM IF Tstg Tj PARAMETER continuous reverse voltage peak reverse voltage continuous forward current storage temperature operating junction temperature in series with a 10 kΩ resistor CONDITIONS − − − −55 −55 MIN. 6 8 20 +150 +150 MAX. V V mA °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance CONDITIONS VR = 6 V; see Fig.3 VR = 6 V; Tj = 85 °C; see Fig.3 f = 470 MHz; VR = 1 V VR = 1 V; f = 1 MHz; see Figs 2 and 4 VR = 4 V; f = 1 MHz; see Figs 2 and 4 C d ( 1V ) ----------------C d ( 4V ) capacitance ratio f = 1 MHz −...




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