Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Description
BB102M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-587 (Z) 1st. Edition November 1997 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provid...
