Document
Advance Product Datasheet
June 10, 2003
9.9-11.2Gb/s Optical Modulator Driver
OC-192 Metro and Long Haul Applications Surface Mount Package
TGA4953-EPU
Key Features and Performance
• • • • • • • Metro MSA Compatible Wide Drive Range (3V to 10V) Single-ended Input / Output Low Power Dissipation (1W at Vo=6V) Very Low Rail Ripple 25 ps Edge Rates (20/80) Small Form Factor - 11.4 x 8.9 x 2 mm - 0.450 x 0.350 x 0.080 inches Evaluation Board Available.
•
Description
The TriQuint TGA4953-EPU is part of a series of surface mount modulator drivers suitable for a variety of driver applications and is compatible with Metro MSA standards. The 4953 consists of two high performance wideband amplifiers combined with off chip circuitry assembled in a surface mount package. A single 4953 placed between the MUX and Optical Modulator provides OEMs with a board level modulator driver surface mount solution. The 4953 provides Metro and Long Haul designers with system critical features such as: low power dissipation (1.1 W at Vo=6 V), very low rail ripple, high voltage drive capability at 5V bias (6 V amplitude adjustable to 3 V), low output jitter (10 ps typical), and low input drive sensitivity (250 mV at Vo=6 V). The 4953 requires external DC blocks, a low frequency choke, and control circuitry. The TGA4953-EPU is available on an evaluation board.
Primary Applications
• Mach-Zehnder Modulator Driver for Metro and Long Haul.
Measured Performance
TGA4953 Evaluation Board (Metro MSA Conditions) 10.7 Gb/s, Vplus=5 V, Id=210 mA, (Pdc=1.1 Watt) Vout=6 Vpp, CPC=50%, Vin = 500 mVpp Scale: 2 V/div, 15 ps/div
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
Advance Product Datasheet
TGA4953EPU
MAXIMUM RATINGS
SYMBOL Vd1, Vd2T Drain Voltage
PARAMETER 6/ POSITIVE SUPPLY VOLTAGE
VALUE 8V
NOTES
POSITIVE SUPPLY CURRENT Id1 Id2T Pd Vg1, Vg2 Ig1, Ig2 Vctrl1, Vctrl2 Ictrl1, Ictrl2 PIN VIN TCH TSTG Drain Current Drain Current POWER DISSIPATION NEGATIVE GATE Voltage Gate Current CONTROL GATE Voltage Gate Current RF INPUT Sinusoidal Continuous Wave Power 10.7Gb/s PRBS Input Voltage Peak to Peak OPERATING CHANNEL TEMPERATURE STORAGE TEMPERATURE 23 dBm 4 Vpp 150 0C -40 to 125 C
0
100 mA 300mA 4W 0 V to –3 V 5 mA Vd/2 to –3 V 5 mA
1/ 2/
3/
4/ 5/
Notes: 1/ 2/ 3/ 4/ 5/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating. When operated at this bias condition with a base plate temperature of 800C, the median life is reduced. Assure Vctl1 never exceeds Vd1 and assure Vctrl2 never exceeds Vd2 during bias up and down sequences. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings represent the maximum operable values for the device.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
Advance Product Datasheet
TGA4953EPU
THERMAL INFORMATION Parameter Test Condition Pdiss (W) .71 TBase (°C) 80 TCH (°C) 98 RθJC (°C/W) 26 MTTF (HRS) >1E6
RθJC Thermal Resistance (channel to backside of carrier)
Vd2T=4.7V, Id2T=150mA +/-5%
Notes: 1. Based on a detailed thermal model of the output stage where channel temperature is highest. Assumes worst case power dissipation condition (where no RF is applied at the input (no power is dissipated in the load). 2. Thermal transfer is conducted thru the bottom of the TGA4953EPU package into the motherboard. Design the motherboard to assure adequate thermal transfer to the base plate.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
Advance Product Datasheet
TGA4953EPU
RF SPECIFICATIONS (TA = 25°C Nominal) NOTE TEST MEASUREMENT CONDITIONS MIN SMALL SIGNAL BW SATURATED POWER BW 1/, 2/ SMALL-SIGNAL GAIN MAGNITUDE 2 and 4 GHz 6 GHz 10 GHz 14 GHz 18 GHz GAIN FLATNESS SMALL SIGNAL AGC RANGE NOISE FIGURE 3/, 4/ EYE AMPLITUDE 500KHz thru 5GHz Midband 3 GHz VD2T=8.0V VD2T=6.5V VD2T=5.5V VD2T=4.5V VD2T=4.0V 5/ 6/, 7/ 1/, 2/ 1/, 2/ ADDITIVE JITTER (rms) SATURATED OUTPUT POWER INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE RISE TIME (20/80) 2, 4, 6, 8, and 10 GHz 2, 4, 6, 10, 14, and 18GHz 2, 4, 6, 10, 14, and 18GHz 25 10 10 15 15 25 30 10 8.0 7.0 6.0 5.5 .5.