BAW79D

BAW78.../BAW79... Silicon Switching Diodes
Switching applications
High breakdown voltage BAW78D 2 BAW79D 2 1 2 3 1 2 3 Type BAW78D BAW79D Parameter Package SOT89 SOT89 Configuration single common cathode Symbol VR VRM IF IFM IFS Ptot Value Marking GD GH Unit Maximum Ratings at TA = 25°C, unless otherwise specified Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation BAW78D, TS ≤ 125°C BAW79D, TS ≤ 115°C Junction temperature Storage temperature Thermal Resistance Parameter 400 400 1 1 10 V A W 1 1 Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 25 ≤ 35 °C Unit Junction - soldering point1) BAW78D BAW79D 1 K/W Feb-03-2003 BAW78.../BAW79... 1For calculation of RthJA please refer to Application Note Thermal Resistance Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics 400 V Breakdown voltage V(BR) I (BR) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100
Test circuit for reverse recovery time D.U.T. IR - 1 50 µA VF CT t rr , V 10 1 1.6 2 pF µs Puls generator: t p = 10µs, D = 0.05, tr = 0.6ns, R i = 50
Oscillograph ΙF EHN00019 Oscillograp: R = 50
, tr = 0.35ns C  1pF 2 Feb-03-2003 BAW78.../BAW79... R...