BAW79A

BAW79A...BAW79D Silicon Switching Diodes
Switching applications
High breakdown voltage
Common cathode 1 2 3 2 VPS05162 2 1 3 EHA07003 Type BAW79A BAW79B BAW79C BAW79D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking GE GF GG GH 1 = A1 1 = A1 1 = A1 1 = A1 Pin Configuration 2 = C1/2 2 = C1/2 2 = C1/2 2 = C1/2 3 = A2 3 = A2 3 = A2 3 = A2 Package SOT89 SOT89 SOT89 SOT89 Symbol VR VRM IF IFM IFS Ptot Tj Tstg BAW 79A 50 50 BAW 79B 100 100 1 1 10 1 BAW 79C 200 200 BAW 79D 400 400 Unit V A Surge forward current, t = 1
s Total power dissipation , TS = 115 °C Junction temperature Storage temperature W °C 150 -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS
35 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BAW79A...BAW79D Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW79A BAW79B BAW79C BAW79D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA trr 1 CD 10 - Unit max. V typ. V(BR) 50 100 200 400 VF IR IR 1.6 2 1 50 - µA pF µs Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 10µs, D =...