Silicon Switching Diodes
BAW78.../BAW79...
Silicon Switching Diodes
Switching applications High breakdown voltage
BAW78D
2
BAW79D
2
1
2
...
Description
BAW78.../BAW79...
Silicon Switching Diodes
Switching applications High breakdown voltage
BAW78D
2
BAW79D
2
1
2
3
1
2
3
Type BAW78D BAW79D
Parameter
Package SOT89 SOT89
Configuration single common cathode
Symbol VR VRM IF IFM IFS Ptot Value
Marking GD GH
Unit
Maximum Ratings at TA = 25°C, unless otherwise specified
Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation BAW78D, TS ≤ 125°C BAW79D, TS ≤ 115°C Junction temperature Storage temperature
Thermal Resistance Parameter
400 400 1 1 10
V A
W 1 1
Tj Tstg Symbol RthJS
150 -65 ... 150
Value ≤ 25 ≤ 35
°C
Unit
Junction - soldering point1) BAW78D BAW79D
1
K/W
Feb-03-2003
BAW78.../BAW79...
1For
calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics 400 V Breakdown voltage V(BR) I (BR) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A
AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100 Test circuit for reverse recovery time
D.U.T.
IR
-
1 50
µA
VF CT t rr ,
V 10 1
1.6 2
pF µs
Puls generator: t p = 10µs, D = 0.05, tr = 0.6ns, R i = 50
Oscillograph
ΙF
EHN00019
Oscillograp: R = 50, tr = 0.35ns C 1pF
2
Feb-03-2003
BAW78.../BAW79...
R...
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