BAW56S

BAW56... Silicon Switching Diode For high-speed switching applications Common anode configuration BAW56 BAW56T BAW56W ! BAW56S BAW56U $ # , " " , ! ,  , ,  ,   ! Type BAW56 BAW56S BAW56T BAW56U BAW56W Package SOT23 SOT363 SC75 SC74 SOT323 Configuration common anode double common anode common anode double common anode common anode Marking A1s A1s A1s A1s A1s 1 Jun-03-2003 BAW56... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation BAW56, TS ≤ 31°C BAW56S, TS ≤ 85°C BAW56T, TS ≤ 104°C BAW56U, TS ≤ 90°C BAW56W, TS ≤ 103°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAW56 BAW56S BAW56T BAW56U BAW56W 1For Symbol VR VRM IF IFS Ptot Value 80 85 200 4.5 330 250 250 250 250 Unit V mA A mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value 360 260 185 240 190 °C Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 Jun-03-2003 BAW56... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics 85 Breakdown voltage V(BR) I(BR) = 100 µA Reverse current VR = 70 V VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA VF 715 855 1000 1200 1250 IR 0.15 30 50 mV µA Unit V AC Characteristics Diode capacitance VR = 0 V, f = 1 ...