BAW56S

DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAW56S High-speed double diode array Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21 Philips Semiconductors Product specification High-speed double diode array FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 450 mA. APPLICATIONS General purpose switching in e.g. surface mounted circuits. DESCRIPTION The BAW56S consists of two dual high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. 1 Top view Marking code: A1t. 2 3 MSA370 BAW56S PINNING PIN 1 2 3 4 5 6 cathode (k1) cathode (k2) common anode (a1) cathode (k3) cathode (k4) common anode (a2) DESCRIPTION 6 5 4 handbook, halfpage 6 5 4 1 2 3 MGL159 Fig.1 Simplified outline (SOT363) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. One or more diodes loaded. total power dissipation storage temperature junction temperature Ts = 60 °C; note 1 − − − − −65 −65 4 1 ...