BAW56LT1

www.DataSheet4U.com BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) Symbol VR IF IFM(surge) IFSM 4 A Value 70 200 500 Unit V mA mA ANODE 3 http://onsemi.com CATHODE 1 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 417 −55 to +150 Unit mW mW/°C °C/W 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 12 MARKING DIAGRAM mW mW/°C °C/W 1 TJ, Tstg °C A1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and overbar may vary depending upon manufacturing location. A1 M G G RqJA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 3. Square Wave; Tj = 25°C. ORDERING INFORMATION Device BAW56LT1 BAW56LT1G BAW56LT3 ...