Monolithic Dual Switching Diode Common Anode
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BAW56LT1
Preferred Device
Dual Switching Diode Common Anode
Features
• Pb−Free Packages are Avail...
Description
www.DataSheet4U.com
BAW56LT1
Preferred Device
Dual Switching Diode Common Anode
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) Symbol VR IF IFM(surge) IFSM 4 A Value 70 200 500 Unit V mA mA ANODE 3
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CATHODE 1 2 CATHODE
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 417 −55 to +150 Unit mW mW/°C °C/W
1 2 3
SOT−23 (TO−236) CASE 318 STYLE 12
MARKING DIAGRAM
mW mW/°C °C/W 1 TJ, Tstg °C A1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and overbar may vary depending upon manufacturing location. A1 M G G
RqJA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Square Wave; Tj = 25°C.
ORDERING INFORMATION
Device BAW56LT1 BAW56LT1G BAW56LT3 ...
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