T2800D

T2800D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. Blocking Voltage to 400 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Four Quadrant Gating Device Marking: Logo, Device Type, e.g., T2800D, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to +125°C, Gate Open) On–State RMS Current (All Conduction Angles, TC = +80°C) Peak Non–Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = +80°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width = 10 µs, TC = +80°C) Average Gate Power (t = 8.3 ms, TC = +80°C) Peak Gate Current (Pulse Width = 10 µs, TC = +80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) ITSM Value 400 8.0 100 Unit Volts Amps Amps 4 http://onsemi.com TRIACS 8 AMPERES RMS 400 VOLTS MT2 G MT1 I2t PGM PG(AV) IGM TJ Tstg 40 16 0.35 4.0 – 40 to +125 – 40 to +150 A2s Watts Watt Amps 1 2 3 TO–220AB CASE 221A STYLE 4 PIN ASSIGNMENT °C °C 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such ...