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T2800 Dataheets PDF



Part Number T2800
Manufacturers Motorola
Logo Motorola
Description TRIAC
Datasheet T2800 DatasheetT2800 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by T2800/D Triacs Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • Blocking Voltage to 600 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • T2800 — Four Qu.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by T2800/D Triacs Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • Blocking Voltage to 600 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • T2800 — Four Quadrant Gating MT2 T2800 SERIES TRIACs 8 AMPERES RMS 200 thru 600 VOLTS MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to +100°C, Gate Open) T2800 B D M RMS On-State Current (Conduction Angle = 360°) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = +80°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (Pulse Width = 1 µs) Average Gate Power Peak Gate Trigger Current (Pulse Width = 1 µs) Operating Junction Temperature Range Storage Temperature Range (TC = +80°C) IT(RMS) ITSM I2t PGM PG(AV) IGTM TJ Tstg Symbol VDRM 200 400 600 8 100 40 16 0.35 4 –40 to +100 –40 to +150 Amps Amps A2s Watts Watt Amps °C °C Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.2 Unit °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV 1 Motorola Thyristor Device Data © Motorola, Inc. 1995 1 T2800 SERIES ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (VD = Rated VDRM, Gate Open) Peak On-State Voltage (Either Direction)* (IT = 30 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+) T2800 MT2(+), G(–) T2800 MT2(–), G(–) T2800 MT2(–), G(+) T2800 TC = 25°C TC = 100°C Symbol IDRM — — VTM IGT — — — — 10 20 15 30 25 60 25 60 — — — 1.7 10 2 2 Min Typ Max Unit µA mA Volts mA Gate Trigger Voltage (Continuous dc) (All Polarities) (VD = 12 Vdc, RL = 100 Ohms) (RL = 125 Ohms, VD = VDRM, TC = 100°C) Holding Current (Either Direction) (VD = 12 Vdc, Gate Open) T2800 VGT — 0.2 IH — tgt dv/dt(c) — — 15 1.6 10 30 — — 1.25 — 2.5 — Volts mA Gate Controlled Turn-On Time (VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs) Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C) T2800 µs V/µs dv/dt V/µs *Pulse Test: Pulse Width p 300 µs, Duty Cycle p 2%. B D M 100 — 60 — — — — — — TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) FIGURE 1 – CURRENT DERATING P(AV) , AVERAGE POWER DISSIPATION (WATTS) 100 12 10 8 6 4 2 0 0 FIGURE 2 – POWER DISSIPATION 95 FULL CYCLE SINUSOIDAL WAVEFORM FULL CYCLE SINUSOIDAL WAVEFORM MAXIMUM TYPICAL 90 85 80 0 2 4 6 8 IT(RMS), RMS ON-STATE CURRENT (AMP) 2 4 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 2 Motorola Thyristor Device Data T2800 SERIES PACKAGE DIMENSIONS –T– B F C SEATING PLANE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 S 4 Q 1 2 3 A U K H Z L V G D N J R STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 3 T2800 SERIES Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain lif.


H6750 T2800 T2800D


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