SIPMOS® Small-Signal Transistor
q VDS − 60 V q ID − 0.18 A q RDS(on) 10 Ω q P channel q Enhancement mode
SP 0610L
2 3 ...
SIPMOS® Small-Signal
Transistor
q VDS − 60 V q ID − 0.18 A q RDS(on) 10 Ω q P channel q Enhancement mode
SP 0610L
2 3 1
Type
Ordering Code Tape and Reel Information bulk
Pin Configuration Marking 1 D 2 G 3 S
Package
SP 0610 L Q67000-S065 Maximum Ratings Parameter Drain-source voltage
SP0610L TO-92
Symbol
Values − 60 − 60 ± 20 − 0.18 − 0.72 0.63 − 55 … + 150 ≤ 200 – E 55/150/56
Unit V
VDS VDGR VGS ID ID puls Ptot Tj, Tstg RthJA RthJSR TA = 25 ˚C TA = 25 ˚C
Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TA = 25 ˚C Pulsed drain current, Max. power dissipation,
A W ˚C K/W
Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
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SP 0610L
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = − 60 V, VGS = 0 Tj = 25 ˚C Gate-source leakage current VGS = − 20 V, VDS = 0 Drain-source on-resistance VGS = − 10 V, ID = − 0.5 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = − 0.5 A Input capacitance VGS = 0, VDS = − 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = − 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = − 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VDD = − 30 V, VGS = −10 ...
