2N2369A

2N2369A HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CB O V CE S V CE O V EB O IC I CM Pt ot Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Current (10 µs pulse) Total Power Dissipation at T amb ≤ 25 °C at T c ase ≤ 25 °C at T c ase ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.5 0.2 0.5 0.36 1.2 0.68 – 65 to 200 Unit V V V V A A W W W °C 1/6 T s t g, T j November 1988 2N2369A THERMAL DATA R t h j -c ase R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I CES V (BR) CBO Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (V B E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Test Conditions V CB = 20 V V CE = 20 V I C = 10 µA T amb = 150 °C Min. Typ. Max. 30 0.4 Unit µA µA 40 V V (BR)CES I C = 10 µA 40 V V (B R)CEO * I C = 10 mA 15 V V (BR...