2N2369

2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO I CM Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current (t = 10 µs) Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.5 0.5 0.36 1.2 0.68 – 65 to 200 Unit V V V V A W W W °C T s t g, T j Products approve d to CECC 50004-022/023 available on request. January 1989 1/4 2N2369 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO V ( BR) V (BR) V (BR) V ( BR) V CE V BE CBO Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Test Conditions V CB = 20 V V CB = 20 V I C = 10 µA I C = 10 µA I C = 10 mA I E = 10 µA I C = 10 m...